RESISTIVE RANDOM ACCESS MEMORY

摘要

A resistive random access memory (RRAM) element (100) including a substrate (110), a conductive layer (120), a resistive switching layer (130), a copper-containing oxide layer (140), and an electron supply layer (150) is provided. In a preferred embodiment, a CuTi/CuOx/SiNx layer structure is deposited on a Pt or TiN/Au/Ti bottom electrode overlying an oxidised Si substrate.