| 发明名称 | Semiconductor device | ||
| 摘要 | A semiconductor device according to an embodiment comprises: a field effect transistor comprising a semiconductor layer and a gate electrode; a wiring line layer positioned above the field effect transistor; and a control circuit that adjusts a voltage of a wiring line in the wiring line layer. The wiring line layer comprises: a contact wiring line connected to a source or a drain of the field effect transistor; and a first wiring line facing a position between the gate electrode and the contact wiring line, of the semiconductor layer. The control circuit adjusts the contact wiring line to a certain voltage and sets the first wiring line to a floating state. | ||
| 申请公布号 | US9564224(B2) | 申请公布日期 | 2017.02.07 |
| 申请号 | US201514848647 | 申请日期 | 2015.09.09 |
| 申请人 | KABUSHIKI KAISHA TOSHIBA | 发明人 | Inden Tomoya;Okano Kimitoshi;Okuyama Kiyoshi |
| 分类号 | G11C11/34;G11C16/10;H01L27/02;H01L27/115;H01L23/535;H01L23/528;G11C16/12;G11C16/06 | 主分类号 | G11C11/34 |
| 代理机构 | Oblon, McClelland, Maier & Neustadt, L.L.P. | 代理人 | Oblon, McClelland, Maier & Neustadt, L.L.P. |
| 主权项 | 1. A semiconductor device, comprising: a field effect transistor comprising a semiconductor layer and a gate electrode; a wiring line layer positioned above the field effect transistor; and a control circuit that adjusts a voltage of a wiring line in the wiring line layer, the wiring line layer comprising: a contact wiring line connected to a source or a drain of the field effect transistor; anda first wiring line facing a position between the gate electrode and the contact wiring line, of the semiconductor layer, the control circuit adjusting the contact wiring line to a certain voltage andsetting the first wiring line to a floating state. | ||
| 地址 | Minato-ku JP | ||