| 发明名称 |
Method for vapor-phase growth of single crystal silicon |
| 摘要 |
<p>A method for vapor-phase growth which allows an epiwafer of a smooth surface free from microroughness to be produced is provided. This method comprises a step of heating up a silicon single crystal substrate in an ambience of an inert gas started at a temperature of less than 800 DEG C and a step of removing a native oxide film formed on the surface of the silicon single crystal substrate by etching with hydrogen gas in an ambience of hydrogen gas at a temperature of not less than 950 DEG C and not more than 1190 DEG C prior to the vapor-phase growth. <IMAGE></p> |
| 申请公布号 |
EP0730048(A1) |
申请公布日期 |
1996.09.04 |
| 申请号 |
EP19960301353 |
申请日期 |
1996.02.28 |
| 申请人 |
SHIN-ETSU HANDOTAI COMPANY LIMITED |
发明人 |
HABUKA, HITOSHI;TATE, NAOTO;MAYUZUMI, MASANORI;TSUNODA, HITOSHI;KATAYMA, MASATAKE |
| 分类号 |
C30B29/06;C23C16/02;C30B25/02;C30B33/12;H01L21/205;H01L21/302;H01L21/3065;(IPC1-7):C30B25/02 |
主分类号 |
C30B29/06 |
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