| 发明名称 | Semiconductor process | ||
| 摘要 | The present disclosure relates to a semiconductor process, which includes: (a) providing a semiconductor element; (b) attaching the semiconductor element to a carrier by an adhesive layer, so that the adhesive layer is sandwiched between the semiconductor element and the carrier; and (c) cutting the semiconductor element to form a plurality of semiconductor units. Thereby, the gaps between the semiconductor units are fixed after the cutting process, so as to facilitate testing the semiconductor units. | ||
| 申请公布号 | US9564376(B2) | 申请公布日期 | 2017.02.07 |
| 申请号 | US201414494449 | 申请日期 | 2014.09.23 |
| 申请人 | ADVANCED SEMICONDUCTOR ENGINEERING, INC. | 发明人 | Tsao Yu-Cheng;Wang Cheng-Hung;Lin Chun-Chieh;Yang Hsiu-Hsiung;Tsai Yu-Pin |
| 分类号 | H01L21/66;H01L21/78 | 主分类号 | H01L21/66 |
| 代理机构 | Foley & Lardner LLP | 代理人 | Foley & Lardner LLP ;Liu Cliff Z. |
| 主权项 | 1. A semiconductor process, comprising: (a) providing a semiconductor element; (b) attaching the semiconductor element to a carrier by an adhesive layer, so that the adhesive layer is sandwiched between the semiconductor element and the carrier; (c) cutting the semiconductor element to form a plurality of semiconductor element units; and (d) removing the semiconductor element units from the adhesive layer. | ||
| 地址 | Kaosiung TW | ||