Methods of forming a pattern and devices formed by the same

摘要

The inventive concepts provide methods of forming a pattern. In the method, a block copolymer layer may be formed on a neutral layer having an uneven structure and then phase separation is induced. The neutral layer may have an affinity for all of a hydrophilic polymer and a hydrophobic polymer, so that vertical cultivation of phases of the block copolymer may be realized on the uneven structure. Thus, a self-assembled phenomenon may be induced.

主权项

1. A method of forming a pattern, the method comprising:
forming a neutral layer having an uneven structure over a substrate such that lower surfaces of the neutral layer have different distances to the substrate; coating a block copolymer layer on the neutral layer; phase-separating the block copolymer layer to form a plurality of first patterns spaced apart from each other and a second pattern filling a space between the first patterns; removing the first patterns or the second pattern; and performing an etching process using a not-removed pattern of the first patterns or the second pattern as an etch mask.