Substrate processing apparatus and substrate processing method using same

摘要

A substrate processing method uses a substrate processing apparatus including a chamber for accommodating a substrate, a lower electrode to mount the substrate, a first RF power applying unit for applying an RF power for plasma generation into the chamber, and a second RF power applying unit for applying an RF power for bias to the lower electrode. The RF power for plasma generation is controlled to be intermittently changed by changing an output of the first RF power applying unit at a predetermined timing. If no plasma state or an afterglow state exists in the chamber by a control of the first RF power applying unit, an output of the second RF power applying unit is controlled to be in an OFF state or decreased below an output of the second RF power applying unit when the output of the first RF power applying unit is a set output.

主权项

1. A substrate processing apparatus, comprising:
a chamber configured to accommodate a substrate; a lower electrode disposed in the chamber to mount the substrate; a first RF power applying unit configured to apply an RF power for plasma generation into the chamber; a second RF power applying unit configured to apply an RF power for bias to the lower electrode; and a controller configured to control the first RF power applying unit for plasma generation to be intermittently changed by changing an output of the first RF power applying unit at a predetermined timing, to control the second RF power applying unit to apply RF power for bias to the lower electrode during application of power by the first RF power applying unit to generate a plasma such that, during a first period in which the first RF power applying unit is applying power to generate a plasma, the second RF power applying unit is continuously applying power throughout the first period or is applying power with a plurality of pulses throughout the first period, and, to control the second RF power applying unit such that during a second period if no plasma state or an afterglow state exists in the chamber by a control of the first RF power applying unit, an output of the second RF power applying unit is controlled to be in an OFF state or decreased below an output of the second RF power applying unit when the output of the first RF power applying unit is a set output.