| 发明名称 | Optoelectronic component | ||
| 摘要 | An optoelectronic component includes a semiconductor chip that emits a primary radiation in the short-wave blue spectral range at a dominant wavelength of less than approximately 465 nm; and a phosphor that converts at least part of the primary radiation into a longer-wave secondary radiation in the green spectral range at a dominant wavelength of between approximately 490 nm and approximately 550 nm and at least partly surrounds the semiconductor chip, wherein a mixed light composed of primary radiation and secondary radiation has a dominant wavelength at wavelengths of approximately 460 nm to approximately 480 nm such that a luminous flux of the mixed light is up to 130% greater than a luminous flux in an optoelectronic component without a phosphor having the same dominant wavelength in a range of 460 nm to 480 nm, and the phosphor is arranged in a lamina that bears directly on the semiconductor chip. | ||
| 申请公布号 | US9564560(B2) | 申请公布日期 | 2017.02.07 |
| 申请号 | US201514980027 | 申请日期 | 2015.12.28 |
| 申请人 | OSRAM Opto Semiconductors GmbH | 发明人 | Baade Torsten;Groβe Kristin |
| 分类号 | H01L33/50;H01L33/56;C09K11/08;C09K11/77;H01L33/26 | 主分类号 | H01L33/50 |
| 代理机构 | DLA Piper LLP (US) | 代理人 | DLA Piper LLP (US) |
| 主权项 | 1. An optoelectronic component comprising: a semiconductor chip that emits a primary radiation in the short-wave blue spectral range at a dominant wavelength of less than approximately 465 nm; and a phosphor that converts at least part of the primary radiation into a longer-wave secondary radiation in the green spectral range at a dominant wavelength of between approximately 490 nm and approximately 550 nm and at least partly surrounds the semiconductor chip,wherein a mixed light composed of primary radiation and secondary radiation has a dominant wavelength at wavelengths of approximately 460 nm to approximately 480 nm such that a luminous flux of the mixed light is up to 130% greater than a luminous flux in an optoelectronic component without a phosphor having the same dominant wavelength in a range of 460 nm to 480 nm, the phosphor is arranged in a lamina that bears directly on the semiconductor chip, the lamina comprises a matrix material into which the phosphor is introduced with a concentration of 5% by weight to 50% by weight, and the lamina has a thickness of 30 micrometers to 200 micrometers. | ||
| 地址 | DE | ||