| 摘要 |
A process for the direct synthesis of Cu-SAPO-34 comprising at least the steps: preparation of a mixture of water, at least one silicon source, at least one Al source, at least one P source, at least one Cu source, at least one 0SDA1 (any polyamine), and at least one OSDA2 source (where OSDA2 is any organic molecule capable of directing the synthesis of SAPO 34); and where the final synthesis mixture has the molar composition: a Si:0.5 Al:c Cu:d OSDA1:e OSDA2:f H2O wherein a is in the range from 0.01 to 0.3; b is in the range from 0.2 to 0.49; c is in the range from 0.001 to 0.6; d is in the range from 0.001 to 0.6; e is in the range from 0.001 to 2; f is in the range 1 to 200; hydrothermal treatment of the mixture at 80−200° C. until formation of the crystalline material, and recovery of the crystalline material. |
| 主权项 |
1. Process for the direct synthesis of Cu-SAPO-34 comprising the steps of:
(i) preparing a synthesis mixture containing water, at least one silicon source, at least one Al source, at least one P source, at least one Cu source, at least one OSDA1 wherein the OSDA1 is a polyamine selected from the group of tetraethylenepentamine, triethylenetetramine, 1,4,8,11-tetraazacyclotetradecane or 1,4,8,11-tetramethyl-1,4,8,11-tetraazacyclotetradecane, and at least one OSDA2, wherein the OSDA2 is an organic compound different from polyamine and capable of directing the synthesis of the SAPO-34 and a final synthesis mixture having a molar composition of: a Si:0.5 Al:b P:c Cu:d OSDA1:e OSDA2:fH2O where a is in the range from 0.01 to 0.3; where b is in the range from 0.2 to 0.49; where c is in the range from 0.001 to 0.6; where d is in the range from 0.001 to 0.6; where e is in the range from 0.001 to 2; where f is in the range from 1 to 200; (ii) hydrothermally treating the mixture at 80-200° C. until formation of crystalline material, (iii) recovering of the crystalline material, (iv) removing OSDA1 and OSDA2 from the crystalline material. |
