MOSFET WITH ULTRA LOW DRAIN LEAKAGE

摘要

A semiconductor device includes a monocrystalline substrate configured to form a channel region between two recesses in the substrate. A gate conductor is formed on a passivation layer over the channel region. Dielectric pads are formed in a bottom of the recesses and configured to prevent leakage to the substrate. Source and drain regions are formed in the recesses on the dielectric pads from a deposited non-crystalline n-type material with the source and drain regions making contact with the channel region.

主权项

1. A method for forming a transistor, comprising:
forming a passivation layer on a monocrystalline substrate; forming a gate conductor over a channel region of the substrate; etching recesses in the substrate through the gate dielectric, the recesses extending below a portion of the passivation layer in undercut regions; depositing a dielectric material that forms on the passivation layer, forms a gate cap material and forms dielectric pads in a bottom of the recesses; and forming source and drain regions in the recesses on the dielectric pads from an n-type material with the source and drain regions making contact with the channel region.