SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE

摘要

A semiconductor device or a memory device with low power consumption and a small area is provided. The semiconductor device includes a sense amplifier and a memory cell. The memory cell is provided over the sense amplifier. The sense amplifier includes a first transistor and a second transistor. The memory cell includes a third transistor and a capacitor. The first transistor is a p-channel transistor. The second transistor and the third transistor each include an oxide semiconductor in a channel formation region. The third transistor is preferably provided over the capacitor.

主权项

1. A semiconductor device comprising:
a first circuit comprising a first transistor and a second transistor electrically connected to each other; a first insulating film over the first circuit; and a second circuit over the first insulating film, the second circuit comprising a capacitor and a third transistor electrically connected to each other, wherein the third transistor is positioned over the capacitor, wherein the first transistor is a p-channel type transistor, wherein the second transistor and the third transistor each comprise an oxide semiconductor in a channel formation region, wherein the second circuit is configured to hold a potential, and wherein the first circuit is configured to amplify the potential held in the second circuit.