| 摘要 |
A memory element (10) comprises a magnetization free layer (12) formed in film shape on which a nonmagnetic layer (13) and a magnetization fixed layer (14) are laminated. The magnetization free layer (12) stores one bit of data "0" or "1" depending on magnetization direction, and rewrites data by reversing the magnetization direction. As the magnetization free layer (12), an antiferromagnetic material which expresses an anomalous hall effect and which is capable of magnetization direction reversal is used. Magnetization direction reversal of the magnetization free layer (12) is performed by a spin transfer torque method using the magnetization fixed layer (14). When reading data, a read current (If) is caused to flow in one direction, and a hall voltage generated in the magnetization free layer (12) by the anomalous hall effect is extracted from the magnetization free layer (12). In accordance with the magnetization direction of the magnetization free layer (12), the sign of the hall voltage is reversed. |
