| 摘要 |
Disclosed is a method for manufacturing a semiconductor device, including a step of yielding a pattern 2a of a polysiloxane-containing composition over a substrate 1, and a step of forming an ion impurity region 6 in the substrate, wherein, after the step of forming an ion impurity region, the method further includes a step of firing the pattern at a temperature of 300 to 1,500°C. This method makes it possible that after the formation of the ion impurity region in the semiconductor substrate, the pattern 2a of the polysiloxane-containing composition is easily removed without leaving any residual. Thus, the yield in the production of a semiconductor device can be improved and the tact time can be shortened. |
