发明名称 MN-DOPED PZT-BASED PIEZOELECTRIC FILM FORMATION COMPOSITION AND MN-DOPED PZT-BASED PIEZOELECTRIC FILM
摘要 A composition for forming a PZT-based piezoelectric film formed of Mn-doped composite metal oxides is provided, the composition including: PZT-based precursors containing metal atoms configuring the composite metal oxides; a diol; and polyvinylpyrrolidone, in which when a metal atom ratio in the composition is shown as Pb:Mn:Zr:Ti, the PZT-based precursors are contained so that a metal atom ratio of Pb is satisfied to be from 1.00 to 1.20, a metal atom ratio of Mn is satisfied to be equal to or greater than 0.002 and less than 0.05, a metal atom ratio of Zr is satisfied to be from 0.40 to 0.55, a metal atom ratio of Ti is satisfied to be from 0.45 to 0.60, and the total of Zr and Ti in a metal atom ratio is 1.
申请公布号 EP3125317(A1) 申请公布日期 2017.02.01
申请号 EP20150769102 申请日期 2015.03.27
申请人 Mitsubishi Materials Corporation 发明人 DOI, Toshihiro;SAKURAI, Hideaki;SOYAMA, Nobuyuki
分类号 H01L41/318;C04B35/491;H01B3/12;H01L41/187 主分类号 H01L41/318
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