发明名称 半導体レーザダイオード
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor laser diode capable of preventing COD deterioration on a rear-end surface.SOLUTION: A laser diode (LD) 10 includes: a substrate 31 composed of a semiconductor material; and an active layer 33, and a lower cladding layer 32 and an upper cladding layer 34 stacked so as to interpose the active layer 33 therebetween in its inside. In the LD10, a resonator is formed by a front-end surface 11a and a rear-end surface 11b. In the LD10, a plurality of stripes (a stripe 20a, a stripe 20b, and a stripe 20c) are formed in parallel with the resonator direction. Each width of the stripes 20a, 20b, and 20c gradually narrows from the front-end surface 11a toward the rear-end surface 11b.
申请公布号 JP6070147(B2) 申请公布日期 2017.02.01
申请号 JP20120273422 申请日期 2012.12.14
申请人 三菱電機株式会社 发明人 黒木 公治;元田 隆
分类号 H01S5/22 主分类号 H01S5/22
代理机构 代理人
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