| 摘要 |
A photoelectric conversion device includes a positive electrode (2), a negative electrode (6), and a photoelectric conversion layer (4) including a p-type organic semiconductor material (4A) and an n-type organic semiconductor material (4B) that configure a bulk heterojunction. The photoelectric conversion layer (4) includes an amorphous polymer compound including a carbazole ring, a fluorene ring or a cyclopentadithiopene ring in a main chain as the p-type organic semiconductor material, and includes an amorphous fullerene derivative as the n-type organic semiconductor material. The photoelectric conversion layer has a diffraction peak corresponding to a plane spacing d = 1.6 nm to 2. 0 nm in an X-ray diffraction profile. |
