Resistive random access memory device and manufacturing method thereof

摘要

In accordance with an embodiment, a resistive random access memory device includes a substrate, first and second wiring lines, and a storage cell. The first and second wiring lines are disposed on the substrate so as to intersect each other. The storage cell is disposed between the first and second wiring lines at the intersection of the first and second wiring lines and includes a first electrode, a resistive switching film on the first electrode, a second electrode on the resistive switching film, and a tantalum oxide (TaOx) layer. The first electrode is electrically connected to the first wiring line. The second electrode is electrically connected to the second wiring line. The tantalum oxide (TaOx) layer is disposed between the first electrode and the resistive switching film and is in contact with the resistive switching film.

主权项

1. A resistive random access memory device, comprising:
a substrate; first and second wiring lines disposed on the substrate so as to intersect each other; and a storage cell disposed between the first and second wiring lines at an intersection of the first and second wiring lines, the storage cell comprising
a first electrode electrically connected to the first wiring line,a resistive switching film on the first electrode,a second electrode on the resistive switching film, which is electrically connected to the second wiring line, anda tantalum oxide (TaOx) layer disposed between the first electrode and the resistive switching film, the tantalum oxide (TaOx) layer being in contact with the resistive switching film, wherein the first electrode extends in a direction perpendicular to a main surface of the substrate, and the second electrode extends in a direction parallel to the main surface of the substrate.