| 发明名称 | Semiconductor device | ||
| 摘要 | A semiconductor device includes a substrate having an edge, a semiconductor layer provided on a substrate, an electrode pad provided on the semiconductor layer, an inorganic insulating film having a first opening through which an upper surface of the electrode pad is exposed, and a resin film provided on the inorganic insulating film, the resin film having a second opening and a third opening separated from each other, where the upper surface of the electrode pad is exposed through the second opening, where the third opening is located between the second opening and the edge of the substrate, and where a bottom of the third opening is constituted by the resin film or the inorganic insulating film. | ||
| 申请公布号 | US9559033(B2) | 申请公布日期 | 2017.01.31 |
| 申请号 | US201414274507 | 申请日期 | 2014.05.09 |
| 申请人 | Sumitomo ELectric Device Innovations, Inc. | 发明人 | Haematsu Hitoshi |
| 分类号 | H01L23/29;H01L23/31;H01L23/00 | 主分类号 | H01L23/29 |
| 代理机构 | Venable LLP | 代理人 | Venable LLP ;Santori Michael A. |
| 主权项 | 1. A semiconductor device comprising: a substrate having an edge; a semiconductor layer provided on the substrate; an electrode pad provided on the semiconductor layer; an inorganic insulating film formed on and in contact with the electrode pad, the inorganic insulating film having a first opening through which an upper surface of the electrode pad is exposed; and a resin film provided on the inorganic insulating film, the resin film having a second opening and a third opening separated from each other, wherein the upper surface of the electrode pad is exposed through the second opening, wherein the third opening is located between the second opening and the edge of the substrate, wherein a whole bottom of the third opening is exposed and consists of the resin film or the inorganic insulating film, and wherein the resin film is formed of polyimide or benzocyclobutene. | ||
| 地址 | Yokohama-shi JP | ||