| 发明名称 | Vertical memory devices, memory arrays, and memory devices | ||
| 摘要 | Vertical memory devices comprise vertical transistors in an array region and digit lines extending in a first direction and comprising a source region or a drain region of at least some of the vertical transistors. The vertical memory devices further include word lines extending in a second direction along sidewalls of the vertical transistors and along sidewalls of columns of an oxide material in a word line end region. The wordlines extend closer to an upper surface of the vertical memory device on the sidewalls of the oxide material than on the sidewalls of the vertical transistors. Memory arrays comprising vertical transistors in an array region, digit line, and word lines are disclosed, as are memory devices comprising transistors in an array region, digit lines, and word lines. | ||
| 申请公布号 | US9559201(B2) | 申请公布日期 | 2017.01.31 |
| 申请号 | US201514718785 | 申请日期 | 2015.05.21 |
| 申请人 | Micron Technology, Inc. | 发明人 | Surthi Shyam |
| 分类号 | H01L27/108;H01L29/78;H01L29/66;H01L21/762;H01L21/764;H01L29/423 | 主分类号 | H01L27/108 |
| 代理机构 | TraskBritt | 代理人 | TraskBritt |
| 主权项 | 1. A vertical memory device comprising: vertical transistors in an array region; digit lines extending in a first direction and comprising a source region or a drain region of at least some of the vertical transistors; and word lines extending in a second direction along sidewalls of the vertical transistors and along sidewalls of columns of an oxide material in a word line end region, the word lines extending closer to an upper surface of the vertical memory device on the sidewalls of the oxide material than on the sidewalls of the vertical transistors. | ||
| 地址 | Boise ID US | ||