发明名称 Wet cleaning method for cleaning small pitch features
摘要 A method for reducing contaminants in a semiconductor device is provided. The method includes cleaning the semiconductor substrate. The cleaning includes rotating the semiconductor substrate and dispersing an aerosol at a predetermined temperature to a surface of the semiconductor substrate or a layer formed on the substrate to be cleaned. The aerosol includes a chemical having a predetermined pressure and a gas having a predetermined flow rate.
申请公布号 US9558927(B2) 申请公布日期 2017.01.31
申请号 US201313942072 申请日期 2013.07.15
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Huang Chien-Hua;Huang Tsung-Min;Lee Chung-Ju
分类号 H01L21/02;H01L21/67;H01L21/306 主分类号 H01L21/02
代理机构 Slater Matsil, LLP 代理人 Slater Matsil, LLP
主权项 1. A method of cleaning a semiconductor substrate, the method comprising: providing a semiconductor substrate, the semiconductor substrate having a major surface; rotating the semiconductor substrate; and dispersing an aerosol from a nozzle at a predetermined temperature to a surface of the semiconductor substrate to be cleaned, the aerosol having a first aerosol size, the aerosol comprising: a chemical agent having a predetermined pressure; anda gas agent having a predetermined flow rate; and providing a laser beam or pulse laser irradiation beam impinging upon the aerosol at or near the nozzle to produce a laser assisted energetic aerosol formed by the laser beam or pulse laser irradiation beam prior to the aerosol coming into contact with the surface of the semiconductor substrate, the laser assisted energetic aerosol having a second aerosol size, the second aerosol size smaller than the first aerosol size, the laser beam or pulse laser irradiation beam incident to the aerosol in a direction substantially parallel to the major surface of the semiconductor substrate.
地址 Hsin-Chu TW