Methods of forming memory device constructions, methods of forming memory cells, and methods of forming semiconductor constructions

摘要

Memory device constructions include a first column line extending parallel to a second column line, the first column line being above the second column line; a row line above the second column line and extending perpendicular to the first column line and the second column line; memory material disposed to be selectively and reversibly configured in one of two or more different resistive states; a first diode configured to conduct a first current between the first column line and the row line via the memory material; and a second diode configured to conduct a second current between the second column line and the row line via the memory material. In some embodiments, the first diode is a Schottky diode having a semiconductor anode and a metal cathode and the second diode is a Schottky diode having a metal anode and a semiconductor cathode.

主权项

1. A method of forming a memory device construction, comprising:
forming a first horizontal column line; forming a stack of materials above the first column line, the stack of materials comprising a row line over a memory material, the stack of materials having a pair of opposing sidewalls; forming insulative spacers along the opposing sidewalls of the stack of materials; forming conductive spacers along the insulative spacers; forming a second horizontal column line parallel to the first horizontal column line; and forming a diode configured to conduct a current between the first column line and the row line through the memory material.