Semiconductor device

摘要

A semiconductor device includes a first electrode, a first insulating layer having a first opening reaching the first electrode and having a ring-shaped first side wall exposed to the first opening, an oxide semiconductor layer on the first side wall, the oxide semiconductor layer being connected with the first electrode, a gate insulating layer on the oxide semiconductor layer, the oxide semiconductor layer being between the first side wall and the gate insulating layer, a gate electrode facing the oxide semiconductor layer on the first side wall, the gate insulating layer being between the oxide semiconductor layer and the gate electrode, and a second electrode above the first insulating layer, the second electrode being connected with the oxide semiconductor layer.

主权项

1. A semiconductor device, comprising:
a first electrode; a first insulating layer having a first opening reaching the first electrode and having a ring-shaped first side wall exposed to the first opening; an oxide semiconductor layer on the first side wall, the oxide semiconductor layer being connected with the first electrode; a gate insulating layer on the oxide semiconductor layer, the oxide semiconductor layer being between the first side wall and the gate insulating layer; a gate electrode facing the oxide semiconductor layer on the first side wall, the gate insulating layer being between the oxide semiconductor layer and the gate electrode; and a second electrode above the first insulating layer, the second electrode being connected with the oxide semiconductor layer; further comprising: a second insulating layer above the first electrode, the first insulating layer, the oxide semiconductor layer and the gate insulating layer; a fourth electrode connected with the first electrode; and a fifth electrode connected with the gate electrode; wherein: the fourth electrode is connected with the first electrode via a second opening in the second insulating layer; the second electrode is connected with the oxide semiconductor layer via a third opening in the second insulating layer; and the fifth electrode is connected with the gate electrode via a fourth opening in the second insulating layer.