发明名称 Semiconductor device having antenna and method for manufacturing thereof
摘要 The present invention provides an antenna in that the adhesive intensity of a conductive body formed on a base film is increased, and a semiconductor device including the antenna. The invention further provides a semiconductor device with high reliability that is formed by attaching an element formation layer and an antenna, wherein the element formation layer is not damaged due to a structure of the antenna. The semiconductor device includes the element formation layer provided over a substrate and the antenna provided over the element formation layer. The element formation layer and the antenna are electrically connected. The antenna has a base film and a conductive body, wherein at least a part of the conductive body is embedded in the base film. As a method for embedding the conductive body in the base film, a depression is formed in the base film and the conductive body is formed therein.
申请公布号 US9559129(B2) 申请公布日期 2017.01.31
申请号 US201213468354 申请日期 2012.05.10
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 Ito Kyosuke;Maruyama Junya;Tsurume Takuya;Yamazaki Shunpei
分类号 H01L27/13;G06K19/077;H01Q1/22;H01Q7/00;H01L27/12 主分类号 H01L27/13
代理机构 Robinson Intellectual Property Law Office 代理人 Robinson Intellectual Property Law Office ;Robinson Eric J.
主权项 1. A semiconductor device comprising: an element formation layer over and in contact with a substrate, the element formation layer comprising a thin film transistor, an interlayer insulating film over the thin film transistor and a wiring over the interlayer insulating film; a connection terminal over and in contact with the wiring; an anisotropic conductive film over the element formation layer and the connection terminal, the anisotropic conductive film comprising a conductive material; and an antenna over the anisotropic conductive film, wherein the antenna includes a film and a conductive body, wherein the wiring and the conductive body are electrically connected to each other via the connection terminal and the conductive material, wherein a bottom surface of the film includes a depression formed by pressing a mold against the film, wherein the depression has a stepped shape in a cross section, wherein the conductive body is in the depression, wherein the film is in contact with the anisotropic conductive film, and wherein a bottom surface of the conductive body is flush with the bottom surface of the film.
地址 Kanagawa-ken JP