发明名称 |
Method of manufacturing semiconductor device, substrate processing apparatus, and non-transitory computer-readable recording medium |
摘要 |
A method of manufacturing a semiconductor device includes: (a) forming a first film containing a metal element on a substrate by performing a cycle a predetermined number of times, the cycle including: (a-1) supplying a first precursor gas being a fluorine-free inorganic gas containing the metal element to the substrate; and (a-2) supplying a first reactant gas having reducibility to the substrate; (b) forming a second film containing the metal element on the first film by performing a cycle a predetermined number of times, the cycle including: (b-1) supplying a second precursor gas containing the metal element and fluorine to the substrate; and (b-2) supplying a second reactant gas having reducibility to the substrate; and (c) forming a film containing the metal element and obtained by the first film and the second film being laminated on the substrate by performing the (a) and (b). |
申请公布号 |
US9558937(B2) |
申请公布日期 |
2017.01.31 |
申请号 |
US201514886768 |
申请日期 |
2015.10.19 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
Nakatani Kimihiko;Harada Kazuhiro;Ashihara Hiroshi;Yamamoto Ryuji |
分类号 |
H01L21/02;C23C16/52;C23C16/455;H01L21/28;H01L21/285;C23C16/06;C23C16/14;C23C16/56;H01L29/51;H01L21/768 |
主分类号 |
H01L21/02 |
代理机构 |
Volpe and Koenig, P.C. |
代理人 |
Volpe and Koenig, P.C. |
主权项 |
1. A method of manufacturing a semiconductor device, comprising:
forming a film composed of a first film containing a metal element and a second film containing the metal element on a substrate, the first film and the second film being laminated, by performing:
(a) forming the first film on the substrate by performing a first cycle a first predetermined number of times, the first cycle including:
(a-1) supplying a first precursor gas being a fluorine-free inorganic gas containing the metal element to the substrate; and(a-2) supplying a first reactant gas to the substrate; and(b) forming the second film on the first film by performing a second cycle a second predetermined number of times, the second cycle including:
(b-1) supplying a second precursor gas containing the metal element and fluorine to the substrate; and(b-2) supplying a second reactant gas to the substrate,wherein at least one of the first reactant gas or the second reactant gas includes a gas containing the metal element and an amino group or an inorganic hydrogen-containing gas. |
地址 |
Tokyo JP |