发明名称 Method of manufacturing semiconductor device, substrate processing apparatus, and non-transitory computer-readable recording medium
摘要 A method of manufacturing a semiconductor device includes: (a) forming a first film containing a metal element on a substrate by performing a cycle a predetermined number of times, the cycle including: (a-1) supplying a first precursor gas being a fluorine-free inorganic gas containing the metal element to the substrate; and (a-2) supplying a first reactant gas having reducibility to the substrate; (b) forming a second film containing the metal element on the first film by performing a cycle a predetermined number of times, the cycle including: (b-1) supplying a second precursor gas containing the metal element and fluorine to the substrate; and (b-2) supplying a second reactant gas having reducibility to the substrate; and (c) forming a film containing the metal element and obtained by the first film and the second film being laminated on the substrate by performing the (a) and (b).
申请公布号 US9558937(B2) 申请公布日期 2017.01.31
申请号 US201514886768 申请日期 2015.10.19
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 Nakatani Kimihiko;Harada Kazuhiro;Ashihara Hiroshi;Yamamoto Ryuji
分类号 H01L21/02;C23C16/52;C23C16/455;H01L21/28;H01L21/285;C23C16/06;C23C16/14;C23C16/56;H01L29/51;H01L21/768 主分类号 H01L21/02
代理机构 Volpe and Koenig, P.C. 代理人 Volpe and Koenig, P.C.
主权项 1. A method of manufacturing a semiconductor device, comprising: forming a film composed of a first film containing a metal element and a second film containing the metal element on a substrate, the first film and the second film being laminated, by performing: (a) forming the first film on the substrate by performing a first cycle a first predetermined number of times, the first cycle including: (a-1) supplying a first precursor gas being a fluorine-free inorganic gas containing the metal element to the substrate; and(a-2) supplying a first reactant gas to the substrate; and(b) forming the second film on the first film by performing a second cycle a second predetermined number of times, the second cycle including: (b-1) supplying a second precursor gas containing the metal element and fluorine to the substrate; and(b-2) supplying a second reactant gas to the substrate,wherein at least one of the first reactant gas or the second reactant gas includes a gas containing the metal element and an amino group or an inorganic hydrogen-containing gas.
地址 Tokyo JP