| 发明名称 | Method of manufacturing nitride semiconductor element | ||
| 摘要 | A method of manufacturing a nitride semiconductor element includes preparing a wafer having a nitride semiconductor layer which includes p-type dopants, forming an altered portion by condensing laser beam on the wafer, and after the forming an altered portion, forming a p-type nitride semiconductor layer by subjecting the wafer to annealing. | ||
| 申请公布号 | US9559253(B2) | 申请公布日期 | 2017.01.31 |
| 申请号 | US201414526740 | 申请日期 | 2014.10.29 |
| 申请人 | NICHIA CORPORATION | 发明人 | Narita Junya;Wakai Yohei;Okamoto Kazuto;Nishioka Mizuki |
| 分类号 | H01L21/28;H01L33/00 | 主分类号 | H01L21/28 |
| 代理机构 | Mori & Ward, LLP | 代理人 | Mori & Ward, LLP |
| 主权项 | 1. A method of manufacturing a nitride semiconductor element comprising: preparing a wafer having a nitride semiconductor layer which includes p-type dopants; subsequently forming an altered portion by focusing laser beam inside the wafer; and then annealing the wafer to form a p-type nitride semiconductor layer. | ||
| 地址 | Anan-shi JP | ||