| 发明名称 |
Semiconductor device |
| 摘要 |
In order to realize an SJ-MOSFET and an IGBT on a single chip and realize a new arrangement configuration for an SJ-MOSFET section and an IGBT section in a single semiconductor chip, provided is a semiconductor device including a semiconductor substrate; two or more super-junction transistor regions provided on the semiconductor substrate; and one or more IGBT regions that are provided in regions sandwiched by the two or more super-junction transistor regions, in a cross section obtained by cleaving along a pane perpendicular to the semiconductor substrate. |
| 申请公布号 |
US9559171(B2) |
申请公布日期 |
2017.01.31 |
| 申请号 |
US201514877933 |
申请日期 |
2015.10.08 |
| 申请人 |
FUJI ELECTRIC CO., LTD. |
发明人 |
Naito Tatsuya;Otsuki Masahito |
| 分类号 |
H01L29/10;H01L29/739;H01L29/06;H01L29/78;H01L29/32;H01L27/07;H01L29/36;H01L29/861 |
主分类号 |
H01L29/10 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a semiconductor substrate; two or more super-junction MOSFET regions provided on the semiconductor substrate; and one or more IGBT regions that are provided in regions sandwiched by the two or more super-junction MOSFET regions, in a cross section obtained by cleaving along a plane perpendicular to the semiconductor substrate. |
| 地址 |
Kanagawa JP |
