Method of Forming a FinFET Having an Oxide Region in the Source/Drain Region

摘要

Embodiments of the present disclosure include a semiconductor device, a FinFET device, and methods for forming the same. An embodiment is a semiconductor device including a first semiconductor fin extending above a substrate, the first semiconductor fin having a first lattice constant, an isolation region surrounding the first semiconductor fin, and a first source/drain region in the first semiconductor fin, the first source/drain having a second lattice constant different from the first lattice constant. The semiconductor device further includes a first oxide region along a bottom surface of the first source/drain region, the first oxide region extending into the isolation region.

主权项

1. A semiconductor device comprising:
a first semiconductor fin extending above a substrate, the first semiconductor fin having a first lattice constant; an isolation region surrounding the first semiconductor fin; a first source/drain region in the first semiconductor fin, the first source/drain having a second lattice constant different from the first lattice constant an etch stop layer over and in contact with the first source/drain region, configured to prevent a formation of an oxide on a top surface of the first source/drain region; and a first oxide region along a bottom surface of the first source/drain region, the first oxide region extending into the isolation region.