| 发明名称 |
METHODS FOR PREPARING LAYERED SEMICONDUCTOR STRUCTURES |
| 摘要 |
Methods for preparing layered semiconductor structures are disclosed. The methods may involve pretreating an ion-implanted donor wafer by annealing the ion-implanted donor wafer to cause a portion of the ions to out-diffuse prior to wafer bonding. The donor structure may be bonded to a handle structure and cleaved without re-implanting ions into the donor structure. |
| 申请公布号 |
US2017025307(A1) |
申请公布日期 |
2017.01.26 |
| 申请号 |
US201515119304 |
申请日期 |
2015.01.09 |
| 申请人 |
SUNEDISON SEMICONDUCTOR LIMITED |
发明人 |
Ries Michael J.;Libbert Jeffrey Louis;Lottes Charles R. |
| 分类号 |
H01L21/762;H01L23/00 |
主分类号 |
H01L21/762 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for pretreating a structure for use during preparation of a layered semiconductor structure, the structure having a bonding surface for bonding to a second structure, the method comprising:
implanting ions into the structure to form a cleave plane in the structure; annealing the ion-implanted structure to cause a portion of the ions to out-diffuse; activating the bonding surface of the ion out-diffused structure. |
| 地址 |
Singapore SG |
