Methods For Depositing Group 13 Metal or Metalloid Nitride Films

摘要

Described herein are methods for forming a Group 13 metal or metalloid nitride film. In one aspect, there is provided a method of forming an aluminum nitride film comprising the steps of: providing a substrate in a reactor; introducing into the reactor an at least one aluminum precursor which reacts on at least a portion of the surface of the substrate to provide a chemisorbed layer; purging the reactor with a purge gas; introducing a plasma comprising non-hydrogen containing nitrogen plasma into the reactor to react with at least a portion of the chemisorbed layer and provide at least one reactive site wherein the plasma is generated at a power density ranging from about 0.01 to about 1.5 W/cm2; and optionally purge the reactor with an inert gas; and wherein the steps are repeated until a desired thickness of the aluminum nitride film is obtained.

主权项

1. A method of forming a Group 13 metal or metalloid nitride film selected from the group consisting of aluminum nitride, boron nitride, gallium nitride, indium nitride, thallium nitride and combinations thereof via a plasma enhanced atomic layer deposition process (PEALD) or a PEALD-like process, the method comprising the steps of:
a. providing a substrate in a reactor; b. introducing into the reactor an at least one Group 13 metal or metalloid precursor represented by the following Formula I:
MRn(NR1R2)3-n  Iwherein M is selected from the group consisting of boron (B), aluminum (Al), gallium (Ga), indium (In), thallium (Th), and combinations thereof; R is selected from a linear or branched C1 to C10 alkyl group, a linear or branched C2 to C10 alkenyl group, a linear or branched C2 to C10 alkynyl group, a C1 to C6 dialkylamino group, an electron withdrawing group, and a C6 to C10 aryl group; R1 is selected from hydrogen, a linear or branched C to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C1 to C6 dialkylamino group, an electron withdrawing group, and a C6 to C10 aryl group; R2 is selected from a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C6 alkenyl group, a linear or branched C3 to C6 alkynyl group, a C1 to C6 dialkylamino group, a C6 to C10 aryl group, a linear or branched C1 to C6 fluorinated alkyl group, an electron withdrawing group, and a C4 to C10 aryl group; optionally wherein R1 and R2 are linked together to form a ring selected from a substituted or unsubstituted aromatic ring or a substituted or unsubstituted aliphatic ring; wherein n=0, 1, 2 or 3, wherein the at least one precursor reacts on at least a portion of the surface of the substrate to provide a chemisorbed layer;
c. purging the reactor with a purge gas; d. introducing a plasma comprising non-hydrogen containing nitrogen plasma into the reactor to react with at least a portion of the chemisorbed layer and provide at least one reactive site wherein the plasma is generated at a power density ranging from about 0.01 to about 1.5 W/cm2; and e. optionally purge the reactor with an inert gas, wherein the steps b through e are repeated until a desired thickness of the film is obtained.