METHOD AND APPARATUS FOR EXPOSURE PATTERN CORRECTION AND EXPOSURE SYSTEM

摘要

A method for correcting an exposure pattern on a substrate includes obtaining, based on the exposure pattern, displacement adjustment parameters for adjusting displacements of a worktable supporting the substrate in each of a first direction and a second direction, a rotation angle adjustment parameter for adjusting a rotation angle of the worktable in a rotation direction, and a gap adjustment parameter for adjusting a gap between the worktable and a mask plate. The first direction and the second direction are perpendicular to each other in a horizontal plane. The rotation direction is a direction in which the worktable rotates around a central axis of a base table supporting the mask plate. The method further includes moving the worktable based on the displacement adjustment parameters, the rotation angle adjustment parameter and the gap adjustment parameter.

主权项

1. A method for correcting an exposure pattern on a substrate comprising:
obtaining, based on the exposure pattern, displacement adjustment parameters for adjusting displacements of a worktable supporting the substrate in each of a first direction and a second direction, a rotation angle adjustment parameter for adjusting a rotation angle of the worktable in a rotation direction, and a gap adjustment parameter for adjusting a gap between the worktable and a mask plate, wherein the first direction and the second direction are perpendicular to each other in a horizontal plane, and wherein the rotation direction is a direction in which the worktable rotates around a central axis of a base table supporting the mask plate; and moving the worktable based on the displacement adjustment parameters, the rotation angle adjustment parameter and the gap adjustment parameter.