SUBSTRATE TREATMENT DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND PROGRAM

摘要

Provided is a feature of a rotating-type device wherein plasma can be fed uniformly onto a substrate surface. This invention is provided with: a substrate placement platform rotatably provided in a treatment chamber, a plurality of substrates being placed on the substrate placement platform along the rotation direction; a first treatment region, a second treatment region, and a third treatment region provided in the treatment chamber; a gas feed unit for feeding a first element-containing gas to the first treatment region; a first plasma generation unit provided in the second treatment region, the first plasma generation unit having a first electrode for subjecting a second element-containing gas to plasma excitation; and a second plasma generation unit provided in the third treatment region, the second plasma generation unit having a second electrode for subjecting the second element-containing gas to plasma excitation. The first electrode and the second electrode are provided at different positions in the radial direction of the substrate placement platform.