HIGH-K AND P-TYPE WORK FUNCTION METAL FIRST FABRICATION PROCESS HAVING IMPROVED ANNEALING PROCESS FLOWS

摘要

Embodiments are directed to a method of forming portions of a fin-type field effect transistor (FinFET). The method includes forming at least one fin, and forming a dielectric layer over at least a portion of the at least one fin. The method further includes forming a work function layer over at least a portion of the dielectric layer. The method further includes forming a source region or a drain region adjacent the at least one fin, and performing an anneal operation, wherein the anneal operation anneals the dielectric layer and either the source region or the drain region, and wherein the work function layer provides a protection function to the at least a portion of the dielectric layer during the anneal operation.

主权项

1. A fin-type field effect transistor (FinFET) device comprising:
at least one fin; a dielectric layer over at least a portion of the at least one fin; a work-function metal layer formed over at least a portion of the dielectric layer; and at least one sidewall configured to define a portion of a gate region, wherein the dielectric layer does not extend along an elongated surface of the at least one sidewall.