IN-CELL TOUCH DISPLAY STRUCTURE

摘要

An in-cell touch display structure includes: an upper substrate, a lower substrate, a liquid crystal layer configured between the upper and lower substrates; a black matrix layer, and a thin film transistor and sensing electrode layer. The thin film transistor and sensing electrode layer includes a gate line sub-layer having a plurality of gate lines and a plurality of connection segments separated by the gate lines, and a source line sub-layer having a plurality of source lines and a plurality of sensing conductor segments separated by the source lines, wherein part of the sensing conductor segments and part of the connection segments are electrically connected together to form a plurality of sensing conductor blocks.

主权项

1. An in-cell touch display structure, comprising:
an upper substrate; a lower substrate parallel to the upper substrate; an OLED layer configured between the upper substrate and the lower substrate; a thin film transistor and sensing electrode layer arranged on one side of the lower substrate facing the OLED layer for driving a corresponding pixel driving circuit based on a display pixel signal and a display driving signal, wherein the thin film transistor and sensing electrode layer includes:
a gate line sub-layer having a plurality of gate lines arranged in a first direction and a plurality of connection segments arranged in a second direction, wherein the plurality of connection segments arranged in the second direction are separated by the plurality of gate lines; anda source line sub-layer disposed at one side of the gate line sub-layer facing the liquid crystal layer and having a plurality of source lines arranged in the second direction and a plurality of sensing conductor segments arranged in the first direction, wherein the plurality of sensing conductor segments arranged in the first direction are separated by the plurality of source lines;a cathode layer disposed at one side of the upper substrate facing the OLED layer, the cathode layer being formed with metal material; andan anode layer disposed at one side of the thin film transistor and sensing electrode layer facing the OLED layer and having a plurality of anode pixel electrodes, each connected to a source/drain of a pixel driving transistor of the corresponding pixel driving circuit, wherein part of the sensing conductor segments and part of the connection segments are electrically connected together to form a plurality of sensing conductor blocks arranged in the first direction, wherein the plurality of sensing conductor segments and the plurality of connection segments are disposed at positions corresponding to those of the plurality of gate lines and the plurality of source lines, wherein each of the plurality of connection segments arranged in the second direction includes two ends respectively having a first extension part and a second extension part arranged in the first direction, and each of the plurality of sensing conductor segments arranged in the first direction includes two ends respectively having a first extension part and a second extension part arranged in the second direction, the extension parts being partially overlapped.