| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor which allows a semiconductor layer to be formed with high alignment accuracy and enables device isolation of the transistor without increasing the number of processes, and to provide a manufacturing method of the thin film transistor and an image display device.SOLUTION: A thin film transistor 50 has: a substrate 1; a gate electrode 2 formed on the substrate 1; a gate insulator layer 4 formed over the substrate 1 and the gate electrode 2; a semiconductor layer 5 formed on the gate insulator layer 4; a protection layer 6 formed on the semiconductor layer 5; a source electrode 7 and a drain electrode 8 formed over the gate insulator layer 4, the semiconductor layer 5, and the protection layer 6. One end 5a at the semiconductor layer 5 in a direction of a current flowing through a channel part between the source electrode 7 and the drain electrode 8 matches with one end 7a of the source electrode 7, and the other end 5b at the semiconductor layer 5 matches with one end 8a of the drain electrode 8. |
