| 摘要 |
A plasma processing apparatus includes a processing chamber; a first electrode for mounting thereon a target substrate in the processing chamber; a second electrode which faces the first electrode obliquely or in parallel thereto to form a high frequency discharging capacitor; a processing gas supply unit for supplying a processing gas to a processing space in the processing chamber; a first high frequency power supply for applying a first high frequency power to at least one of the first and the second electrode to generate a plasma by injecting the processing gas into the processing space; and an electrode position varying mechanism for varying a position of the second electrode in a predetermined direction to vary a capacitance of the capacitor. The apparatus further includes a dielectric partition wall for separating the processing space from an electrode moving space surrounding the second electrode and the electrode position varying mechanism.
|
