发明名称 半導体装置
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device having a small circuit size.SOLUTION: A semiconductor device comprises a first transistor, a second transistor and a capacitative element. A gate of the second transistor is electrically connected with either of a source or a drain of the first transistor. One of a pair of electrodes of the capacitative element is electrically connected with the gate of the second transistor. The other of the pair of the electrodes of the capacitative element is electrically connected with either of a source or a drain of the second transistor. When the first transistor is turned to an off state, the gate of the second transistor is turned to a floating state. A channel of the first transistor can be formed in an oxide semiconductor.
申请公布号 JP6068748(B2) 申请公布日期 2017.01.25
申请号 JP20130049833 申请日期 2013.03.13
申请人 株式会社半導体エネルギー研究所 发明人 上杉 航
分类号 H03K19/0944;H01L29/786 主分类号 H03K19/0944
代理机构 代理人
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