| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, which can simply manufacture a high breakdown voltage DMOS transistor without increasing the number of processes in a manufacturing process.SOLUTION: In a semiconductor device 1 in which an HV-DMOS 2, an HV-CMOS 3 and an LV-CMOS 4 are provided on a common semiconductor substrate 5, a DMOS-P-type body region 12 is formed, which has a double-well structure which includes a low-concentration region 14 which has the same impurity concentration and the same depth with those of a deep p-type well 26 of the HV-CMOS 3, and a high-concentration region 15 which is formed in an inside region of the low-concentration region 14 and has the same impurity concentration and the same depth with those of a p-type well 50 of the LV-CMOS 4. |
