| 摘要 |
To provide a polishing composition that can be used as an alternative of a polishing composition containing cerium oxide abrasive grains in STI and other such CMP applications, and to provide a polishing method and a method for producing a substrate using this polishing composition. A polishing composition being used in applications for polishing a layer that contains a substance having a pH range presenting a positive zeta potential in an aqueous solution of pH 6 or lower, wherein the polishing composition contains abrasive grains (A), abrasive grains (B), and a pH adjusting agent, and the abrasive grains (B) has a negative zeta potential in an aqueous solution of pH 6 or lower, and the value of the average secondary particle diameter of the abrasive grains (B) is less than the value of the average secondary particle diameter of the abrasive grains (A) and is 15 nm or less and the polishing composition has a pH of 6 or lower. |
