发明名称 |
THIN-FILM TRANSISTOR AND PREPARATION METHOD THEREFOR, ARRAY SUBSTRATE, AND DISPLAY PANEL |
摘要 |
This invention discloses a thin film transistor and the preparation method thereof, an array substrate, and a display panel, so as to solve the problem that the active layer is prone to be corroded when a metal oxide thin film transistor is produced by a back channel etching process. The preparation method comprises: forming a gate electrode metal thin film on a base substrate, and allowing the gate electrode metal thin film to form a gate electrode metal layer comprising a gate electrode by a patterning process; forming a gate electrode insulating layer on the gate electrode metal layer; forming an active layer on the gate electrode insulating layer; preparing a metal nanoparticle layer on the active layer, said metal nanoparticle layer being used as an etching protection layer; forming a source and drain electrode metal thin film on the base substrate on which the above processes are finished, and allowing the source and drain electrode metal thin film to form a source and drain electrode metal layer comprising a source electrode and a drain electrode by a patterning process, wherein the source electrode and the drain electrode cover a part of the metal nanoparticle layer; removing or oxidizing the part of the metal nanoparticle layer which is not covered by the source electrode and the drain electrode in an oxygen-containing atmosphere; and forming a passivation layer on the source and drain electrode metal layer. |
申请公布号 |
EP3121840(A1) |
申请公布日期 |
2017.01.25 |
申请号 |
EP20150882903 |
申请日期 |
2015.10.09 |
申请人 |
BOE Technology Group Co., Ltd.;South China University of Technology |
发明人 |
YUAN, Guangcai;YAN, Liangchen;XU, Xiaoguang;WANG, Lei;PENG, Junbiao;LAN, Linfeng |
分类号 |
H01L21/34;H01L29/786 |
主分类号 |
H01L21/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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