发明名称 Memory system having first and second memory devices and driving method thereof
摘要 A memory system includes first and second memory devices, a memory controller configured to control the second memory device, to store a request signal to access the first memory device, and to generate an interrupt signal, and a host configured to receive the request signal in response to the interrupt signal.
申请公布号 US9552314(B2) 申请公布日期 2017.01.24
申请号 US201314090521 申请日期 2013.11.26
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 Lim Sun-Young;Kim Dong-Hwi
分类号 G06F13/24 主分类号 G06F13/24
代理机构 Muir Patent Law, PLLC 代理人 Muir Patent Law, PLLC
主权项 1. A memory system, comprising: first and second memory devices, wherein the first memory device is a volatile memory device and the second memory device is a nonvolatile memory device; a first memory controller configured to control the second memory device, to store a request signal to access the first memory device, and to generate an interrupt signal; and a host configured to receive the request signal in response to the interrupt signal and to cause first data to be transferred from the second memory device to the first memory device, wherein first memory controller is configured to generate the interrupt signal if the first data is part of data that is divisionally stored in the second memory device and a buffer of the first memory controller.
地址 Suwon-si, Gyeonggi-do KR