Semiconductor device and method of fabricating the same

摘要

Provided is a fabricating method of a semiconductor device, including the following. Fin structures are formed on a substrate, and the adjacent fin structures have an opening therebetween. A conductive material layer is formed to cover the fin structures and fill the opening. The conductive material layer and the fin structures are patterned to form a mesh structure. The mesh structure includes first strips extending in a first direction and second strips extending in a second direction. The first strips and the second strips intersect each other, and the mesh structure has holes. The first strips are located on the substrate at positions corresponding to the fin structures. The second strips are located on the substrate, and the conductive material layer in the second strips spans the fin structures. The hole is formed in the opening and surrounded by the first strips and the second strips.

主权项

1. A semiconductor device, comprising:
a substrate; a plurality of fin structures located on the substrate and extending in a first direction, wherein the adjacent fin structures have an opening therebetween; a plurality of comb structures comprising a conductive material, wherein each of the comb structures comprises: a plurality of comb portions respectively inserted into the opening between the adjacent fin structures and in contact with sidewalls of the adjacent fin structures; and a connection portion extending in a second direction and located on the fin structures to connect the comb portions; and a plurality of dielectric pillars respectively inserted into the opening between the adjacent fin structures and in contact with the sidewalls of the adjacent fin structures and the comb portions, wherein the dielectric pillars extend to positions closer to the substrate than bottoms of the fin structures.