Reference voltage generator having diode-connected depletion MOS transistors with same temperature coefficient

摘要

A reference voltage generator has a first N type depletion MOS transistor configured to cause a constant current to flow, and a second N type depletion MOS transistor diode-connected to the first N type depletion MOS transistor and configured to generate a reference voltage based on the constant current. The first and second N type depletion MOS transistors have the same temperature coefficient of a threshold voltage. The first N type depletion MOS transistor has a buried channel into which arsenic impurities are diffused. The second N type depletion MOS transistor has a buried channel into which phosphorous impurities are diffused.

主权项

1. A reference voltage generator, comprising:
a first N type depletion MOS transistor configured to cause a constant current to flow; and a second N type depletion MOS transistor that is diode-connected to the first N type depletion MOS transistor, has the same temperature coefficient of a threshold voltage as a temperature coefficient of a threshold voltage of the first N type depletion MOS transistor, and is configured to generate a reference voltage based on the constant current; wherein the second N type depletion MOS transistor has a buried channel into which phosphorous impurities are diffused, and the first N type depletion MOS transistor has a buried channel into which arsenic impurities are diffused.