Solid-state imaging apparatus changing a gate voltage of a transfer transistor, driving method for the same, and imaging system

摘要

A solid-state imaging apparatus includes: a photoelectric conversion unit configured to convert light into an electric charge; a floating diffusion region configured to convert the electric charge into a voltage; a transfer transistor configured to transfer the electric charge from the photoelectric conversion unit to the floating diffusion region; and a transfer transistor driving circuit configured to control a gate potential of the transfer transistor, wherein the transfer transistor driving circuit controls the gate potential so as to be changed in at least two changing rates during a period of transition from the ON state to the OFF state of the transfer transistor, and the second changing rate out of the two changing rates is higher than the first changing rate.

主权项

1. A solid-state imaging apparatus comprising:
a photoelectric conversion unit configured to convert light into an electric charge; a floating diffusion region; a transfer transistor configured to transfer the electric charge from the photoelectric conversion unit to the floating diffusion region; and a transfer transistor driving circuit configured to control a gate voltage of the transfer transistor, wherein the transfer transistor driving circuit changes the gate voltage of the transfer transistor in a first changing rate during a first period within a period of transition from an ON state to an OFF state of the transfer transistor, and the transfer transistor driving circuit changes the gate voltage of the transfer transistor in a second changing rate higher than the first changing rate during a second period, continuously following the first period, within the period of transition from the ON state to the OFF state of the transfer transistor.