Methods of manufacturing semiconductor laser element and semiconductor laser device

摘要

A method of manufacturing a plurality of semiconductor laser elements having; preparing the semiconductor wafer; forming grooves that extend along second lines on a first main surface side of the semiconductor wafer, and forming a first texture pattern along second lines on a bottom surface of the grooves, the second lines being parallel to a cavity length direction; forming a second texture pattern along the second lines by covering at least part of the first texture pattern with a protective film; and splitting the semiconductor wafer along first lines, the first lines being parallel to a cavity width direction, and splitting along the second lines using a second main surface, which is an opposite side of the first main surface, of the semiconductor wafer as an origin.

主权项

1. A method of manufacturing a plurality of semiconductor laser elements comprising;
preparing a semiconductor wafer; forming grooves that extend along second lines on a first main surface side of the semiconductor wafer, and forming a first texture pattern along second lines on a bottom surface of the grooves, the second lines being parallel to a cavity length direction, the first texture pattern including a plurality of recesses and/or a plurality of protrusions along the cavity length direction; forming a second texture pattern along the second lines by covering at least part of the first texture pattern with a protective film, the second texture pattern having upper surfaces and bottom surfaces that are at a lower position than the upper surfaces, a length of the bottom surfaces of the second texture pattern along the second lines is less than a height from the bottom surfaces of the second texture pattern to the surface on the first main surface side of the semiconductor wafer, a length of the upper surfaces of the second texture pattern along the second lines is less than a height from the upper surfaces of the second texture pattern to the surface on the first main surface side of the semiconductor wafer; and splitting the semiconductor wafer along first lines, the first lines being parallel to a cavity width direction, and splitting the semiconductor wafer along the second lines using a second main surface, which is an opposite side of the first main surface, of the semiconductor wafer as an origin.