On-chip vertical three dimensional microstrip line with characteristic impedance tuning technique and design structures

摘要

A vertical three dimensional (3D) microstrip line structure for improved tunable characteristic impedance, methods of manufacturing the same and design structures are provided. More specifically, a method is provided that includes forming a first microstrip line structure within a back end of the line (BEOL) stack. The method further includes forming a second microstrip line structure separated from the BEOL stack by a predetermined horizontal distance.

主权项

1. A method, comprising:
forming a first microstrip line structure comprising a ground plate within a back end of the line (BEOL) stack; and forming a second microstrip line structure comprising a signal line separated from the BEOL stack by a predetermined horizontal distance, forming a first metal strip below the ground plate and a second metal strip below the signal line such that the first metal strip is formed in a different horizontal plane than the second metal strip, wherein: the ground plate is formed on a first vertical plane that intersects the BEOL stack and in a portion of an oxide layer of the BEOL stack; the signal line is formed on a second vertical plane that avoids intersecting the BEOL stack and in a portion of another oxide layer that is separated from the BEOL stack, and the oxide layer of the BEOL stack is different from the another oxide layer that is separated from the BEOL stack.