Fin field effect transistor (FinFET) device and method for forming the same

摘要

Embodiments for forming a fin field effect transistor (FinFET) device structure are provided. The FinFET device structure includes a substrate and a first fin structure extending above the substrate. The FinFET also includes a first transistor formed on the first fin structure. The first transistor includes a first gate dielectric layer conformally formed on the first fin structure and a first gate electrode formed on the first gate dielectric layer. The FinFET further includes an inter-layer dielectric (ILD) structure formed adjacent to the first transistor. The first gate electrode is in direct contact with a sidewall of the ILD structure.

主权项

1. A fin field effect transistor (FinFET) device structure, comprising:
a substrate; an isolation structure formed on the substrate; a first fin structure extending above the substrate, wherein the first fin structure is along a first direction; a first transistor formed on the first fin structure, wherein the first transistor comprises:
a first gate dielectric layer conformally formed on the first fin structure; anda first gate electrode formed on the first gate dielectric layer; and an inter-layer dielectric (ILD) structure formed adjacent to the first transistor, wherein the first gate electrode is in direct contact with a sidewall of the ILD structure, wherein the sidewall of the ILD structure has a bottom portion and a top portion in a cross-sectional view, the first gate dielectric layer above the isolation structure is in direct contact with the bottom portion of the sidewall of the ILD structure, wherein an upper portion of the first fin structure protrudes from the isolation structure.