| 发明名称 | SONOS type stacks for nonvolatile charge trap memory devices and methods to form the same | ||
| 摘要 | A method includes forming a first oxide layer. The method further includes etching a portion of the first oxide layer using a first decoupled plasma nitridation process. The method includes forming, subsequent to the etching, a charge-trapping layer on the first oxide layer. | ||
| 申请公布号 | US9553175(B2) | 申请公布日期 | 2017.01.24 |
| 申请号 | US201514824023 | 申请日期 | 2015.08.11 |
| 申请人 | CYPRESS SEMICONDUCTOR CORPORATION | 发明人 | Puchner Helmut;Polishchuk Igor;Levy Sagy Charel |
| 分类号 | H01L21/3205;H01L29/66;H01L21/28;H01L29/423;H01L29/51;H01L29/792 | 主分类号 | H01L21/3205 |
| 代理机构 | Lowenstein Sandler LLP | 代理人 | Lowenstein Sandler LLP |
| 主权项 | 1. A method comprising: forming a first oxide layer; etching a portion of the first oxide layer using a first decoupled plasma nitridation process; and forming, subsequent to the etching, a charge-trapping layer on the first oxide layer, wherein the charge-trapping layer includes an oxide-rich oxy-nitride portion and a silicon-rich oxy-nitride portion. | ||
| 地址 | San Jose CA US | ||