| 发明名称 | Semiconductor device and method for forming the same | ||
| 摘要 | A semiconductor device is disclosed. The semiconductor device comprising: a semiconductor substrate having first type conductivity and including an active region and a device isolation film, a doping layer having second type conductivity and buried in a bottom part of the semiconductor substrate of the active region, a recess formed in the semiconductor substrate, a gate electrode provided in the recess. | ||
| 申请公布号 | US9553167(B2) | 申请公布日期 | 2017.01.24 |
| 申请号 | US201514818879 | 申请日期 | 2015.08.05 |
| 申请人 | SK Hynix Inc. | 发明人 | Jang Kyoung Chul |
| 分类号 | H01L29/02;H01L29/66;H01L29/78;H01L29/423;H01L29/49;H01L29/36;H01L21/283;H01L21/3215;H01L21/306 | 主分类号 | H01L29/02 |
| 代理机构 | IP & T Group LLP | 代理人 | IP & T Group LLP |
| 主权项 | 1. A semiconductor device comprising: a semiconductor substrate having first type conductivity and including an active region and a device isolation film; a doping layer having second type conductivity and buried in a bottom part of the semiconductor substrate of the active region; a recess formed in the semiconductor substrate; a gate electrode provided in the recess; and a sealing film formed over the gate electrode and filled in the recess. | ||
| 地址 | Gyeonggi-do KR | ||