发明名称 |
Magnetic shielding package of non-volatile magnetic memory element |
摘要 |
A magnetic shielding package of a non-volatile magnetic memory element, including: a soft magnetic material support plate 12; a first insulating material layer 13 formed on the support plate; a non-volatile magnetic memory element 11 fixed on the first insulating material layer; a second insulating material layer 14 that encapsulates the memory element and the periphery thereof; in the second insulating material layer, a wiring layer 15, a soft magnetic layer 15b or 25 and a conductive portion 16 connecting an electrode of the circuit surface of the memory element and the wiring layer; and a magnetic shield part 17 containing a soft magnetic material arranged like a wall at a distance from a side surface of the memory element so as to surround the memory element side surface partially or entirely, the magnetic shield part being magnetically connected to the soft magnetic layer. |
申请公布号 |
US9553052(B2) |
申请公布日期 |
2017.01.24 |
申请号 |
US201514963970 |
申请日期 |
2015.12.09 |
申请人 |
J-DEVICES CORPORATION |
发明人 |
Matsubara Hiroaki;Iwasaki Toshihiro;Chikai Tomoshige;Ishido Kiminori;Watanabe Shinji;Tamakawa Michiaki |
分类号 |
H01L29/82;H01L23/552 |
主分类号 |
H01L29/82 |
代理机构 |
Flynn, Thiel, Boutell & Tanis, P.C. |
代理人 |
Flynn, Thiel, Boutell & Tanis, P.C. |
主权项 |
1. A magnetic shielding package of a non-volatile magnetic memory element that suppresses an influence of an external magnetic field on the non-volatile magnetic memory element, comprising:
a support plate comprising a soft magnetic material; a first insulating material layer formed on the support plate; a non-volatile magnetic memory element, a face of which opposite to a circuit face of the element is fixed on the first insulating material layer; a second insulating material layer that encapsulates the non-volatile magnetic memory element and the periphery thereof; a wiring layer provided in the second insulating material layer; a soft magnetic layer that is provided in the second insulating material layer and comprises a soft magnetic material; a conductive portion that is provided in the second insulating material layer and connects an electrode in the circuit face of the non-volatile magnetic memory element and the wiring layer; and a magnetic shield part containing a soft magnetic material that is arranged like a wall with a distance from a side surface of the non-volatile magnetic memory element so as to surround the side surface of non-volatile magnetic memory element partially or entirely, wherein the soft magnetic layer and the magnetic shield part are magnetically connected to each other and the wiring layer has a two-layer laminate structure formed of a conductor layer comprising a conductive material and the soft magnetic layer comprising a soft magnetic material. |
地址 |
Usuki-shi, Oita JP |