发明名称 Magnetic shielding package of non-volatile magnetic memory element
摘要 A magnetic shielding package of a non-volatile magnetic memory element, including: a soft magnetic material support plate 12; a first insulating material layer 13 formed on the support plate; a non-volatile magnetic memory element 11 fixed on the first insulating material layer; a second insulating material layer 14 that encapsulates the memory element and the periphery thereof; in the second insulating material layer, a wiring layer 15, a soft magnetic layer 15b or 25 and a conductive portion 16 connecting an electrode of the circuit surface of the memory element and the wiring layer; and a magnetic shield part 17 containing a soft magnetic material arranged like a wall at a distance from a side surface of the memory element so as to surround the memory element side surface partially or entirely, the magnetic shield part being magnetically connected to the soft magnetic layer.
申请公布号 US9553052(B2) 申请公布日期 2017.01.24
申请号 US201514963970 申请日期 2015.12.09
申请人 J-DEVICES CORPORATION 发明人 Matsubara Hiroaki;Iwasaki Toshihiro;Chikai Tomoshige;Ishido Kiminori;Watanabe Shinji;Tamakawa Michiaki
分类号 H01L29/82;H01L23/552 主分类号 H01L29/82
代理机构 Flynn, Thiel, Boutell & Tanis, P.C. 代理人 Flynn, Thiel, Boutell & Tanis, P.C.
主权项 1. A magnetic shielding package of a non-volatile magnetic memory element that suppresses an influence of an external magnetic field on the non-volatile magnetic memory element, comprising: a support plate comprising a soft magnetic material; a first insulating material layer formed on the support plate; a non-volatile magnetic memory element, a face of which opposite to a circuit face of the element is fixed on the first insulating material layer; a second insulating material layer that encapsulates the non-volatile magnetic memory element and the periphery thereof; a wiring layer provided in the second insulating material layer; a soft magnetic layer that is provided in the second insulating material layer and comprises a soft magnetic material; a conductive portion that is provided in the second insulating material layer and connects an electrode in the circuit face of the non-volatile magnetic memory element and the wiring layer; and a magnetic shield part containing a soft magnetic material that is arranged like a wall with a distance from a side surface of the non-volatile magnetic memory element so as to surround the side surface of non-volatile magnetic memory element partially or entirely, wherein the soft magnetic layer and the magnetic shield part are magnetically connected to each other and the wiring layer has a two-layer laminate structure formed of a conductor layer comprising a conductive material and the soft magnetic layer comprising a soft magnetic material.
地址 Usuki-shi, Oita JP