| 摘要 |
A method of modifying a radiation characteristic of an excited emitter (2) and a layer structure (1) therefore, wherein the emitter (2) is placed in the vicinity of a layer structure (1) comprising a metal material, such that the emitter (2) couples to a surface state of the layer structure (1), in particular a surface plasmon polariton, which modifies the radiation characteristic of the emitter (2), wherein the layer structure (1) comprises a metal layer (3) sandwiched between a non-metal superstrate layer (4) and a non-metal substrate layer (5), wherein at least the metal layer (3) and the superstrate layer (4) are separated by a smooth interface (8) with a root mean square roughness equal to or less than 1 nanometer, and wherein the metal layer (3) has a thickness of between 1/100 and 1/20 in relation to an emission wavelength (λ′) of the emitter (2). |
