| 摘要 |
The present invention relates to a method for determining contamination introduced by a device into two samples consisting of a semiconductor material not compensated with doping impurities, the two samples having opposite conductivity types and each including majority doping impurities of which the conductivity type and concentration are known. The method includes the various steps consisting of: a) subjecting (310) each of the two samples to a thermal treatment in the device, the contamination introduced by the device during the thermal treatment leading to the appearance of doping impurities, of which the conductivity type and concentration are unknown, within the two samples, the doping impurities resulting from the contamination being a minority in at least one of the two treated samples; b) measuring (320), in each of the two treated samples, the density of charge carriers as a function of the temperature; c) defining (330), for each of the two treated samples, a curve representing the logarithm of the density of charge carriers as a function of the inverse of the temperature; d) detecting (340), for said at least one of the two treated samples, the position of a change of slope in an area of the curve corresponding to an ionisation rate of the doping impurities; e) determining (350) the concentration of minority doping impurities of said at least one of the two treated samples from the position of the change of slope. |
